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Si5486DU
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.015 at VGS = 4.5 V 20 0.017 at VGS = 2.5 V 0.021 at VGS = 1.8 V ID (A)a 12 12 12 21 nC Qg (Typ.)
FEATURES
* Halogen-free * TrenchFET(R) Power MOSFET * New Thermally Enhanced PowerPAK(R) ChipFET(R) Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
RoHS
COMPLIANT
PowerPAK ChipFET Single
1 2
D D D D D D G S S
APPLICATIONS
* Load Switch, PA Switch, and for Portable Applications * Point-of-Load
D 3 4 Marking Code AG XXX Lot Traceability and Date Code Part # Code S N-Channel MOSFET G
8 7
6 5
Bottom View
Ordering Information: SI5486DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit 20 8 12a 12a 11.6b, c 9.3b, c 40 12a 2.6b, c 31 20 3.1b, c 2b, c - 55 to 150 260 Unit V
Continuous Drain Current (TJ = 150 C) Pulsed Drain Current
A
TC = 25 C TA = 25 C TC = 25 C TC = 70 C Maximum Power Dissipation TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature)d, e
PD TJ, Tstg
W
C
THERMAL RESISTANCE RATINGS
Parameter Maximum Maximum Junction-to-Case (Drain) Junction-to-Ambientb, f t5s Steady State Symbol RthJA RthJC Typical 34 3 Maximum 40 4 Unit C/W
Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 C/W. Document Number: 73783 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1
Si5486DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductancea Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 9.3 A, dI/dt = 100 A/s, TJ = 25 C IS = 9.1 A, VGS = 0 V 0.8 30 17 12 18 TC = 25 C 12 40 1.2 60 30 A V ns nC ns
b a
Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss
Test Conditions VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS , ID = 250 A VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 7.7 A VGS = 2.5 V, ID = 7.3 A VGS = 1.8 V, ID = 4.8 A VDS = 10 V, ID = 7.7 A
Min. 20
Typ.
Max.
Unit V
21 - 3.4 0.4 1 100 1 10 40 0.012 0.014 0.017 46 2100 0.015 0.017 0.021
mV/C V ns A A S
VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 9.3 A
310 180 36 21 3.3 3.1 5 10 15 25 75 25 15 25 85 15 15 50 15 7 54 32
pF
Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 10 V, RL = 1.1 ID 9.3 A, VGEN = 10 V, Rg = 1 VDD = 10 V, RL = 1.1 ID 9.3 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 9.3 A
nC
ns
15 55 10
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73783 S-81449-Rev. B, 23-Jun-08
Si5486DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
40 VGS = 5 thru 2 V 32 I D - Drain Current (A) I D - Drain Current (A) 16
25 C, unless otherwise noted
20
24
12 TC = - 55 C 8 TC = 125 C
16 VGS = 1.5 V 8 VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 2.0
4
TC = 25 C
0 0.0
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.025 3000
Transfer Characteristics
R DS(on) - On-Resistance (m)
0.022 C - Capacitance (pF)
2500 Ciss 2000
0.019 VGS = 1.8 V 0.016 VGS = 2.5 V 0.013 VGS = 4.5 V
1500
1000 Coss Crss 0 4 8 12 16 20
500
0.010 0 8 16 24 32 40
0
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8 ID = 9.3 A VGS - Gate-to-Source Voltage (V) 1.4 VDS = 10 V VDS = 16 V 4 RDS(on) - On-Resistance (Normalized) 6 1.6
Capacitance
VGS = 4.5, 2.5 V, 1.8 V ID = 7.7 A
1.2
1.0
2
0.8
0 0 8 16 24 32 40
0.6 - 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73783 S-81449-Rev. B, 23-Jun-08
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Si5486DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
R DS(on) - Drain-to-Source On-Resistance (m) 40 0.040 ID = 7.7 A
0.035
TJ = 150 C I S - Source Current (A) TJ = 25 C 10
0.030
0.025 TA = 125 C 0.020
0.015 TA = 25 C 0.010 0 1 2 3 4 5
1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.9 0.8 40 0.7 0.6 0.5 0.4 0.3 10 0.2 0.1 - 50 0 0.001 ID = 250 A Power (W) 30 50
On-Resistance vs. Gate-to-Source Voltage
VGS(th) (V)
20
- 25
0
25
50
75
100
125
150
0.01
0.1
1 Time (s)
10
100
1000
TJ - Temperature (C)
Threshold Voltage
100 Limited by RDS(on)*
Single Pulse Power, Junction-to-Ambient
100 s 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms TA = 25 C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 1s 10 s DC
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73783 S-81449-Rev. B, 23-Jun-08
Si5486DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
40 35 30 32 I D - Drain Current (A) Power Dissipation (W) 25 20 15 10 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150
24
16
Package Limited
8
TC - Case Temperature (C)
TC - Case Temperature (C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73783 S-81449-Rev. B, 23-Jun-08
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Si5486DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05
PDM t1 Notes:
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 75 C/W 3. TJM - TA = PDMZthJA(t)
t1 t2
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10
4. Surface Mounted
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2
0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73783.
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Document Number: 73783 S-81449-Rev. B, 23-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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